Preparation and ferroelectric properties of YMnO3 thin films with c-axis preferred orientation by the sol-gel method

被引:13
作者
Kitahata, H [1 ]
Tadanaga, K [1 ]
Minami, T [1 ]
Fujimura, N [1 ]
Ito, T [1 ]
机构
[1] Univ Osaka Prefecture, Grad Sch Engn, Dept Appl Mat Sci, Osaka 5998531, Japan
基金
日本学术振兴会;
关键词
YMnO3 thin film; ferroelectricity; non-volatile ferroelectric memory devices; c-axis preferred orientation;
D O I
10.1023/A:1008761327562
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Hexagonal YMnO3 has a ferroelectric property with an optimal remanent polarization along the c-axis. The c-axis oriented YMnO3 thin films with a small leakage current were prepared by the sol-gel dipping method. The c-axis orientation of the films was promoted by the addition of diethanolamine to the Mn precursor solution. A heat treatment with multiple steps led to a dense film structure with fine grains. The dense structure resulted in the decrease of the leakage current. Furthermore, when the films were heat-treated in a vacuum, the leakage current became considerably small and the ferroelectricity of the YMnO3 thin films was observed even at room temperature.
引用
收藏
页码:589 / 593
页数:5
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