Electron-phonon scattering in GaN/AlN and GaAs/AlAs quantum wells

被引：0
|
作者：
Forbang, TF [1 ]
McIntyre, CR [1 ]
机构：
[1] George Mason Univ, Inst Computat Sci & Informat, Fairfax, VA 22030 USA
来源：
NITRIDE SEMICONDUCTORS | 1998年 / 482卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have studied the effects on the phonon spectrum and on the electron-longitudinal optical phonon scattering in GaN/AlN and GaAs/AlAs quantum wells. Phonon modes and potentials have been calculated for both systems. Results for emission due to electron-interface phonons interactions are presented. We will discuss the implications for relaxation times and electron mobility due to modified LO-phonon scattering in both systems.
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收藏
页码：599 / 604
页数：6
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