Electron-phonon scattering in GaN/AlN and GaAs/AlAs quantum wells

被引：0

作者：

Forbang, TF ^{[1
]}

McIntyre, CR ^{[1
]}

机构：

[1] George Mason Univ, Inst Computat Sci & Informat, Fairfax, VA 22030 USA

来源：

NITRIDE SEMICONDUCTORS | 1998年 / 482卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the effects on the phonon spectrum and on the electron-longitudinal optical phonon scattering in GaN/AlN and GaAs/AlAs quantum wells. Phonon modes and potentials have been calculated for both systems. Results for emission due to electron-interface phonons interactions are presented. We will discuss the implications for relaxation times and electron mobility due to modified LO-phonon scattering in both systems.

引用

页码：599 / 604

页数：6

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