Phonon branch-resolved electron-phonon coupling and the multitemperature model

被引:0
作者
Lu, Zexi [1 ]
Vallabhaneni, Ajit [1 ]
Cao, Bingyang [2 ]
Ruan, Xiulin [1 ]
机构
[1] Purdue Univ, Sch Mech Engn, W Lafayette, IN 47907 USA
[2] Tsinghua Univ, Sch Aerosp Engn, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
THERMAL-CONDUCTIVITY; GRAPHENE; RELAXATION; TRANSPORT; MONOLAYER; DYNAMICS;
D O I
10.1103/PHYsRevB.98.134309
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electron-phonon (e-p) interaction and transport are important for laser-matter interactions, hot-electron relaxation, and metal-nonmetal interfacial thermal transport. A widely used approach is the two-temperature model (TTM), where e-p coupling is treated with a gray approach with a lumped coupling factor G(ep) and the assumption that all phonons are in local thermal equilibrium. However, in many applications, different phonon branches can be driven into strong nonequilibrium due to selective e-p coupling, and a TTM analysis can lead to misleading or wrong results. Here, we extend the original TTM into a general multitemperature model (MTM), by using phonon branch-resolved e-p coupling factors and assigning a separate temperature for each phonon branch. The steady-state thermal transport and transient hot electron relaxation processes in constant and pulse laser-irradiated single-layer graphene (SLG) are investigated using our MTM respectively. Results show that different phonon branches are in strong nonequilibrium, with the largest temperature rise being more than six times larger than the smallest one. A comparison with TTM reveals that under steady state, MTM predicts 50% and 80% higher temperature rises for electrons and phonons respectively, due to the "hot phonon bottleneck" effect. Further analysis shows that MTM will increase the predicted thermal conductivity of SLG by 67% and its hot electron relaxation time by 60 times. We expect that our MTM will prove advantageous over TTM and gain use among experimentalists and engineers to predict or explain a wide ranges of processes involving laser-matter interactions.
引用
收藏
页数:8
相关论文
共 57 条
[1]   THEORY OF THERMAL RELAXATION OF ELECTRONS IN METALS [J].
ALLEN, PB .
PHYSICAL REVIEW LETTERS, 1987, 59 (13) :1460-1463
[2]   Generalized Two-Temperature Model for Coupled Phonons in Nanosized Graphene [J].
An, Meng ;
Song, Qichen ;
Yu, Xiaoxiang ;
Meng, Han ;
Ma, Dengke ;
Li, Ruiyang ;
Jin, Zelin ;
Huang, Baoling ;
Yang, Nuo .
NANO LETTERS, 2017, 17 (09) :5805-5810
[3]   Superior thermal conductivity of single-layer graphene [J].
Balandin, Alexander A. ;
Ghosh, Suchismita ;
Bao, Wenzhong ;
Calizo, Irene ;
Teweldebrhan, Desalegne ;
Miao, Feng ;
Lau, Chun Ning .
NANO LETTERS, 2008, 8 (03) :902-907
[4]   Thermal Transport in Suspended and Supported Monolayer Graphene Grown by Chemical Vapor Deposition [J].
Cai, Weiwei ;
Moore, Arden L. ;
Zhu, Yanwu ;
Li, Xuesong ;
Chen, Shanshan ;
Shi, Li ;
Ruoff, Rodney S. .
NANO LETTERS, 2010, 10 (05) :1645-1651
[5]   Thermal conductivity and ballistic-phonon transport in the cross-plane direction of superlattices [J].
Chen, G .
PHYSICAL REVIEW B, 1998, 57 (23) :14958-14973
[6]   Shape and Temperature Dependence of Hot Carrier Relaxation Dynamics in Spherical and Elongated CdSe Quantum Dots [J].
Chen, Liangliang ;
Bao, Hua ;
Tan, Taizhi ;
Prezhdo, Oleg V. ;
Ruan, Xiulin .
JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (23) :11400-11406
[7]   Theoretical phonon thermal conductivity of Si/Ge superlattice nanowires [J].
Dames, C ;
Chen, G .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (02) :682-693
[8]   Including the effects of electronic stopping and electron-ion interactions in radiation damage simulations [J].
Duffy, D. M. ;
Rutherford, A. M. .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (01)
[9]   Thermal Conductivity of Graphene in Corbino Membrane Geometry [J].
Faugeras, Clement ;
Faugeras, Blaise ;
Orlita, Milan ;
Potemski, M. ;
Nair, Rahul R. ;
Geim, A. K. .
ACS NANO, 2010, 4 (04) :1889-1892
[10]   Four-phonon scattering reduces intrinsic thermal conductivity of graphene and the contributions from flexural phonons [J].
Feng, Tianli ;
Ruan, Xiulin .
PHYSICAL REVIEW B, 2018, 97 (04)