Correlation between structural and optical properties of a-plane GaN films grown on r-plane sapphire by metal organic chemical-vapor deposition

被引：3

作者：

Jung, Mina ^{[1
]}

Chang, Jiho ^{[1
]}

Lee, Hyunjae ^{[2
]}

Ha, Jun-seok ^{[2
]}

Park, Jin-sub ^{[2
]}

Park, Seungwhan ^{[2
]}

Fujii, Katsushi ^{[2
]}

Yao, Takafumi ^{[2
]}

Kil, Gyung-suk ^{[3
]}

Lee, Seogwoo ^{[4
]}

Cho, Myungwhan ^{[4
]}

Whang, Sungmin ^{[5
]}

Seo, Yong-gon ^{[5
]}

机构：

[1] Natl Korea Maritime Univ, Dept Nanosemicond Engn, Pusan 606791, South Korea

[2] Tohoku Univ, Interdisciplinary Res Ctr, Sendai, Miyagi 9808578, Japan

[3] Natl Korea Maritime Univ, Div Elect & Elect Engn, Pusan, South Korea

[4] Wavesquare Co, Yongin 449863, Gyeonggi, South Korea

[5] Korea Elect Technol Inst, Songnam 463816, Gyeonggi, South Korea

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2010年 / 28卷 / 03期

关键词：

gallium compounds; III-V semiconductors; MOCVD; photoluminescence; semiconductor growth; semiconductor thin films; spectral line broadening; stacking faults; THIN-FILMS; ALGAN;

D O I：

10.1116/1.3388889

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have studied the photoluminescence (PL) intensities of a-plane (11-20) GaN films (a-GaN) as a function of x-ray rocking-curve (XRC) linewidth values measured in both c- and m-axis directions. PL intensity of well-known luminescence lines such as 3.47 eV (bound exciton emission), 3.41 eV (basal-plane stacking fault related emission), and 3.29 eV (defect induced emission) are discussed in terms of XRC linewidth values. PL intensities reveal a close relationship with XRC linewidth measured in the c-axis direction, while an unusual relationship was observed between PL intensity and XRC linewidth in the m-axis direction. Inhomogeneous strain along the m-axis direction of a-GaN film is discussed as a cause of XRC linewidth broadening, rather than the formation of structural defects. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3388889]

引用

页码：623 / 626

页数：4

共 50 条

[41] Erbium-doped a-plane GaN epilayers synthesized by metal-organic chemical vapor deposition
Al Tahtamouni, Talal Mohammed
Du, Xiaozhang
Li, Jing
Lin, Jingyu
Jiang, Hongxing
OPTICAL MATERIALS EXPRESS, 2015, 5 (02): : 274 - 280
[42] X-ray diffraction study of strain and defect structure of nonpolar a-plane GaN-layers grown on r-plane sapphire
Kyutt, R. N.
Shcheglov, M. R.
Ratnikov, V. V.
Kalmykov, A. E.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (08): : 1757 - 1760
[43] Photoluminescence study of Si-doped (11(2)over-bar0) a-plane GaN grown on (1(1)over-bar02) r-plane sapphire by metalorganic chemical vapor deposition
Yu, HB
Chen, H
Li, DS
Han, YJ
Zheng, XH
Huang, Q
Zhou, JM
JOURNAL OF CRYSTAL GROWTH, 2004, 263 (1-4) : 94 - 98
[44] Epitaxial growth of nonpolar GaN films on r-plane sapphire substrates by pulsed laser deposition
Yang, Weijia
Wang, Wenliang
Wang, Haiyan
Zhu, Yunnong
Li, Guoqiang
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2016, 43 : 82 - 89
[45] Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition
Bayram, C.
Pere-laperne, N.
Razeghi, M.
APPLIED PHYSICS LETTERS, 2009, 95 (20)
[46] Correlation of thermal with structural and optical properties of high quality GaN/sapphire (0001) grown by metalorganic chemical vapor deposition
Florescu, DI
Lee, DS
Ting, SM
Ramer, JC
Pollak, FH
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (7A): : 4444 - 4447
[47] Growth and optical properties of sol-gel ZnO thin films grown on R-plane sapphire substrates
Nam, Giwoong
Kim, Min Su
Lee, Jewon
Leem, Jae-Young
Lee, Sang-heon
Jung, Jae Hak
Kim, Jin Soo
Kim, Jong Su
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2013, 62 (08) : 1154 - 1159
[48] Nonpolar a-plane ZnO films grown on GaN/sapphire templates with SiNx interlayer by pulsed laser deposition
Han, Xiangyun
Gao, Yihua
Dai, Jiangnan
Yu, Chenhui
Wu, Zhihao
Chen, Changqing
Fang, Guojia
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (14)
[49] Growth kinetics of AlN and GaN films grown by molecular beam epitaxy on R-plane sapphire substrates
Chandrasekaran, R.
Moustakas, T. D.
Ozcan, A. S.
Ludwig, K. F.
Zhou, L.
Smith, David J.
JOURNAL OF APPLIED PHYSICS, 2010, 108 (04)
[50] Structural and optical investigation of GaN grown by metal-organic chemical vapor deposition
Gao, XY
Wang, SY
Li, J
Zheng, YX
Zhang, RJ
Zhou, P
Yang, YM
Chen, LY
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 44 (03) : 765 - 768

← 1 2 3 4 5 →