Correlation between structural and optical properties of a-plane GaN films grown on r-plane sapphire by metal organic chemical-vapor deposition

被引：3

作者：

Jung, Mina ^{[1
]}

Chang, Jiho ^{[1
]}

Lee, Hyunjae ^{[2
]}

Ha, Jun-seok ^{[2
]}

Park, Jin-sub ^{[2
]}

Park, Seungwhan ^{[2
]}

Fujii, Katsushi ^{[2
]}

Yao, Takafumi ^{[2
]}

Kil, Gyung-suk ^{[3
]}

Lee, Seogwoo ^{[4
]}

Cho, Myungwhan ^{[4
]}

Whang, Sungmin ^{[5
]}

Seo, Yong-gon ^{[5
]}

机构：

[1] Natl Korea Maritime Univ, Dept Nanosemicond Engn, Pusan 606791, South Korea

[2] Tohoku Univ, Interdisciplinary Res Ctr, Sendai, Miyagi 9808578, Japan

[3] Natl Korea Maritime Univ, Div Elect & Elect Engn, Pusan, South Korea

[4] Wavesquare Co, Yongin 449863, Gyeonggi, South Korea

[5] Korea Elect Technol Inst, Songnam 463816, Gyeonggi, South Korea

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2010年 / 28卷 / 03期

关键词：

gallium compounds; III-V semiconductors; MOCVD; photoluminescence; semiconductor growth; semiconductor thin films; spectral line broadening; stacking faults; THIN-FILMS; ALGAN;

D O I：

10.1116/1.3388889

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have studied the photoluminescence (PL) intensities of a-plane (11-20) GaN films (a-GaN) as a function of x-ray rocking-curve (XRC) linewidth values measured in both c- and m-axis directions. PL intensity of well-known luminescence lines such as 3.47 eV (bound exciton emission), 3.41 eV (basal-plane stacking fault related emission), and 3.29 eV (defect induced emission) are discussed in terms of XRC linewidth values. PL intensities reveal a close relationship with XRC linewidth measured in the c-axis direction, while an unusual relationship was observed between PL intensity and XRC linewidth in the m-axis direction. Inhomogeneous strain along the m-axis direction of a-GaN film is discussed as a cause of XRC linewidth broadening, rather than the formation of structural defects. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3388889]

引用

页码：623 / 626

页数：4

共 50 条

[31] Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire
Kundys, D.
Schulz, S.
Oehler, F.
Sutherland, D.
Badcock, T. J.
Dawson, P.
Kappers, M. J.
Oliver, R. A.
Humphreys, C. J.
JOURNAL OF APPLIED PHYSICS, 2014, 115 (11)
[32] Growth and properties of m-plane GaN on m-plane sapphire by metal-organic chemical vapor deposition
Paduano, Qing S.
Weyburne, David W.
Tomich, David H.
JOURNAL OF CRYSTAL GROWTH, 2013, 367 : 104 - 109
[33] Structural and optical properties of nonpolar (11-20) a-plane GaN grown on (1-102) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy
Rajpalke, Mohana K.
Roul, Basanta
Kumar, Mahesh
Bhat, Thirumaleshwara N.
Sinha, Neeraj
Krupanidhi, S. B.
SCRIPTA MATERIALIA, 2011, 65 (01) : 33 - 36
[34] A comparative study on the properties of c-plane and a-plane GaN epitaxial films grown on sapphire substrates by pulsed laser deposition
Wang, Wenliang
Yang, Weijia
Wang, Haiyan
Zhu, Yunnong
Yang, Meijuan
Gao, Junning
Li, Guoqiang
VACUUM, 2016, 128 : 158 - 165
[35] Crystallographic tilt and in-plane anisotropies of an a-plane InGaN/GaN layered structure grown by MOCVD on r-plane sapphire using a ZnO buffer
Liu, H. F.
Liu, W.
Guo, S.
Chi, D. Z.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 49 (08)
[36] Characterization of nonpolar a-plane GaN epi-layers grown on high-density patterned r-plane sapphire substrates
Jinno, Daiki
Otsuki, Shunya
Sugimori, Shogo
Daicho, Hisayoshi
Iwaya, Motoaki
Takeuchi, Tetsuya
Kamiyama, Satoshi
Akasaki, Isamu
JOURNAL OF CRYSTAL GROWTH, 2018, 484 : 50 - 55
[37] Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD
Son, Ji-Su
Baik, Kwang Hyeon
Seo, Yong Gon
Song, Hooyoung
Kim, Ji Hoon
Hwang, Sung-Min
Kim, Tae-Geun
JOURNAL OF CRYSTAL GROWTH, 2011, 326 (01) : 98 - 102
[38] Correlation between electrical and surface properties of n-GaN on sapphire grown by metal-organic chemical vapor deposition
Nakada, N
Mori, M
Ishikawa, H
Egawa, T
Jimbo, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (5A): : 2573 - 2577
[39] Titanium oxide nanoparticles spin-coated onto r-plane sapphire substrate: Effects on structural and optical properties of nonpolar a-plane GaN and InGaN/GaN multiple quantum wells
Kim, Ji Hoon
Hwang, Sung-Min
Son, Ji-Su
Baik, Kwang Hyeon
Song, Keun Man
Park, Jung Ho
JOURNAL OF CRYSTAL GROWTH, 2012, 355 (01) : 101 - 108
[40] Effect of growth temperature of AlN interlayers on the properties of GaN epilayers grown on c-plane sapphire by metal organic chemical vapor deposition
Xue, J. S.
Hao, Y.
Zhang, J. C.
Yang, L. A.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10, 2010, 7 (10): : 2371 - 2373

← 1 2 3 4 5 →