Correlation between structural and optical properties of a-plane GaN films grown on r-plane sapphire by metal organic chemical-vapor deposition

被引：3

作者：

Jung, Mina ^{[1
]}

Chang, Jiho ^{[1
]}

Lee, Hyunjae ^{[2
]}

Ha, Jun-seok ^{[2
]}

Park, Jin-sub ^{[2
]}

Park, Seungwhan ^{[2
]}

Fujii, Katsushi ^{[2
]}

Yao, Takafumi ^{[2
]}

Kil, Gyung-suk ^{[3
]}

Lee, Seogwoo ^{[4
]}

Cho, Myungwhan ^{[4
]}

Whang, Sungmin ^{[5
]}

Seo, Yong-gon ^{[5
]}

机构：

[1] Natl Korea Maritime Univ, Dept Nanosemicond Engn, Pusan 606791, South Korea

[2] Tohoku Univ, Interdisciplinary Res Ctr, Sendai, Miyagi 9808578, Japan

[3] Natl Korea Maritime Univ, Div Elect & Elect Engn, Pusan, South Korea

[4] Wavesquare Co, Yongin 449863, Gyeonggi, South Korea

[5] Korea Elect Technol Inst, Songnam 463816, Gyeonggi, South Korea

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2010年 / 28卷 / 03期

关键词：

gallium compounds; III-V semiconductors; MOCVD; photoluminescence; semiconductor growth; semiconductor thin films; spectral line broadening; stacking faults; THIN-FILMS; ALGAN;

D O I：

10.1116/1.3388889

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have studied the photoluminescence (PL) intensities of a-plane (11-20) GaN films (a-GaN) as a function of x-ray rocking-curve (XRC) linewidth values measured in both c- and m-axis directions. PL intensity of well-known luminescence lines such as 3.47 eV (bound exciton emission), 3.41 eV (basal-plane stacking fault related emission), and 3.29 eV (defect induced emission) are discussed in terms of XRC linewidth values. PL intensities reveal a close relationship with XRC linewidth measured in the c-axis direction, while an unusual relationship was observed between PL intensity and XRC linewidth in the m-axis direction. Inhomogeneous strain along the m-axis direction of a-GaN film is discussed as a cause of XRC linewidth broadening, rather than the formation of structural defects. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3388889]

引用

页码：623 / 626

页数：4

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