Characteristics of ion-beam-synthesized tantalum silicide film

被引：1
作者：
Liang, JH [1 ]
Ruan, WM [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30043, Taiwan
来源：
SURFACE AND INTERFACE ANALYSIS | 2005年 / 37卷 / 02期
关键词：
tantalum silicide; ion beam synthesis; ion implantation; rapid thermal annealing; VAPOR VACUUM-ARC; IMPLANTATION; MULTILAYERS;
D O I：
10.1002/sia.1947
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
This paper deals with the characteristics of ion-beam-synthesized tantalum silicide film on different substrates as a function of annealing conditions. An implantation of 2 x 10(17) 40 kV Ta ions cm(-2) was performed using an ion implanter of metal vapour vacuum arc. Silicon wafers of <100> and <111> orientation were chosen as representatives of different substrates. Rapid thermal annealing conditions included annealing temperatures of 550-1000degreesC and annealing times of 5-90s. Annealing-induced variations in microstructure, composition, resistivity and diffusion in the tantalum silicide film were analysed by means of x-ray diffractometry, Rutherford backscattering spectrometry, resistometry and secondary ion mass spectrometry, respectively, in order to compare the as-implanted and as-annealed specimens. The results revealed that tantalum silicide film possesses the most optimum properties when annealed at 850degreesC for 30 s in both the <100> and <111> specimens. Copyright (C) 2005 John Wiley Sons, Ltd.
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页码：129 / 132
页数：4
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