Stability of a thin elastic film close to a rigid plate

被引:4
作者
Chen, Yi-chao [2 ]
Fried, Eliot [1 ]
Tortorelli, Daniel A. [3 ]
机构
[1] McGill Univ, Dept Mech Engn, Montreal, PQ H3A 2K6, Canada
[2] Univ Houston, Dept Mech Engn, Houston, TX 77204 USA
[3] Univ Illinois, Dept Mech Sci & Engn, Urbana, IL 61801 USA
关键词
Pattern formation; Energy minimization; Instability; Bifurcation; Attractive and repulsive van der Waals interactions; SURFACE MODIFICATION; FABRICATION; INSTABILITY; LITHOGRAPHY; POLYMERS; DESIGN; CELLS;
D O I
10.1016/j.jmps.2012.01.011
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We introduce and study a variational model for the formation of patterns induced by bringing the surface of a rigid plate into contact proximity with the surface of a polymeric film strongly bonded to a substrate. We treat the film as a homogeneous, isotropic, hyperelastic solid and account for both attractive and repulsive van der Waals interactions between the film surface and the proximate contractor. Aside from confirming the intuitive expectation that the presence of a repulsive contribution to the van der Waals potential should stabilize patterns that form on the film surface, we elucidate the role of repulsive interactions at the onset of instability. For a recently proposed van der Waals potential involving two parameters, the Hamaker constant A and the equilibrium spacing de, our results include estimates for the critical gap d(c) at which undulations appear on the film surface, the corresponding wavenumber k(c) of the undulations, and a lower bound f(m) for the attractive force needed to induce the undulations. To leading order, d(c) similar to(Ah/mu)(1/4), k(c) similar to 1/h, and f(m) similar to (mu(3)A/h(3))(1/4), where h and mu denote the thickness and infinitesimal shear modulus of the film. Correction terms due to repulsive interactions indicate that, while k(c) may be influenced by mu and A, d(c) may also be influenced by d(e). Granted knowledge of mu and A, our results also suggest a simple experimental protocol for determining d(e). (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码:904 / 920
页数:17
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