Single-heterostructure laser diode producing a 6 W/40 ps optical pulse from a 20 μm stripe width

被引：0
|
作者：
Lanz, Brigitte [1 ]
Kostamovaara, Juha T. [1 ]
Vainshtein, Sergey N. [1 ]
Lantratov, Vladimir M. [2 ]
Kalyuzhnyy, Nikolay A. [2 ]
机构：
[1] Univ Oulu, Dept Elect Engn, Elect Lab, Oulu 90014, Finland
[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
OPTICAL ENGINEERING | 2012年 / 51卷 / 05期
基金：
芬兰科学院;
关键词：
semiconductor laser; high-power picosecond pulse; single-heterostructure; gradient doping profile; room temperature; reproducible; GENERATION; RANGE;
D O I：
10.1117/1.OE.51.5.050503
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A compact, low-cost semiconductor laser diode producing 40 ps full width at half maximum (FWHM) single-spike lasing pulses with 6 Watts peak power from a 20 mu m stripe width is realized in the form of a simple single-heterostructure, grown by metal-organic chemical vapor deposition. The structure possesses a linearly graded doping profile extending from the p(+) and n(+) sides towards the p-n junction. This laser diode is operated under room temperature conditions and applies pumping current pulses (roughly 10 to 20 A/2 to 3 ns FWHM) achievable with a commercially available silicon avalanche transistor as an electrical switch. (C) 2012 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI:10.1117/1.OE.51.5.050503]
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页数：3
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