A universal UHF RFID reader IC in 0.18-μm CMOS technology

被引:51
作者
Khannur, Pradeep Basappa [1 ]
Chen, Xuesong [1 ]
Yan, Dan Lei [1 ]
Shen, Dan [1 ]
Zhao, Bin [1 ]
Raja, M. Kumarasamy [1 ]
Wu, Ye [1 ]
Sindunata, Rendra [1 ]
Yeoh, Wooi Gan [1 ]
Singh, Rajinder [1 ]
机构
[1] ASTAR, Inst Microelect, Singapore 117685, Singapore
关键词
backscatter modulation; CMOS; passive transponder; reader; RFID; RFID interrogator; UHF;
D O I
10.1109/JSSC.2008.920355
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A highly integrated URF RFID reader IC in 0.18-mu m CMOS process covering the entire 860 MHz to 960 MHz RFID band supporting the EPCglobal (TM) Class-1 Generation-2 and ISO-18000-6A/B/C standards is presented. The IC features a transmitter with an output of +10 dBm and a receiver with sensitivity of -96 dBm in listen-before-talk mode (LBT) and -85 dBm in talk-mode. Direct-conversion architecture is used for the receiver for a high level of integration and low power consumption. On-chip dual-loop synthesizer generates high-purity LO signal with frequency resolution of 50 kHz and phase noise of -101 dBc/Hz at 100 kHz offset over the entire 860 to 960 MHz band. The IC integrates 10-bit DACs, pulse-shaping filters, an IQ modulator and a power amplifier in the transmit chain and a low-noise amplifier (LNA), an IQ downconverter, channel-select filters, variable-gain amplifiers and 10-bit ADCs in the receive chain. On-chip ASK demodulator provides demodulated I and Q raw data outputs. The chip has a die area of 6 mm x 6 mm. It operates over a wide range of voltage and temperature, from 1.6 V to 2.0 V and from -25 degrees C to +75 degrees C and consumes 540 mW from a 1.8 V supply at + 25 degrees C.
引用
收藏
页码:1146 / 1155
页数:10
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