Structural and electrical properties of half-Heusler La-Pt-Bi thin films grown by 3-source magnetron co-sputtering

被引：7

作者：

Miyawaki, Tetsuya ^{[1
]}

Sugimoto, Nozomi ^{[1
]}

Fukatani, Naoto ^{[1
]}

Yoshihara, Tatsuhiko ^{[1
]}

Ueda, Kenji ^{[1
]}

Tanaka, Nobuo ^{[2
]}

Asano, Hidefumi ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, EcoTopia Inst, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 07期

关键词：

TOPOLOGICAL INSULATORS;

D O I：

10.1063/1.3675986

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Half-Heusler La-Pt-Bi thin films have been deposited on YAlO3(001) substrate by 3-source magnetron co-sputtering. Control of the Bi content was the critical factor to obtain single phase, c-axis-oriented thin films. Generation of secondary phases was effectively prevented by precise control of the deposition rate for separate targets as well as adjustment of the deposition temperature. The realization of single-phase LaPtBi thin films will provide new potential applications to topological insulating devices based on Heusler alloys. (C) 2012 American Institute of Physics. [doi:10.1063/1.3675986]

引用

页数：3