Germanium on silicon modulators and nanometallic-enhanced detectors for optical interconnects

被引：0

作者：

Miller, David A. B. ^{[1
]}

机构：

[1] Stanford Univ, Ginzton Lab, Stanford, CA 94305 USA

来源：

PROCEEDINGS OF THE IEEE 2008 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For optical interconnect to or on the chip, very efficient optoelectronic devices are required. We discuss the physics and device structures of optical modulators using germanium quantum wells grown on silicon substrates. We also show results and prospects for nanometallics structures to concentrate light into deeply sub-micron optoclectronic devices, and discuss limits to miniaturizing optical components.

引用

页码：231 / 233

页数：3

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