Displacement damage and single event effects of SiC diodes and MOSFETs by neutron, heavy ions and pulsed laser

SiC diodes and MOSFETs (device under test, DUTs) have been tested by neutron and heavy ions, pulsed laser separately or both. Neutron displacement damage (DD) results show that up to 1E12/cm2 neutrons there is no significant leakage current increasing; DUTs have been tested by heavy ion and pulsed laser to get their single event burnt-out (SEB) threshold at some working voltages, results show that pulsed laser and heavy ion are consistent with each other. Then one of the diodes and MOSFETs which has been tested by neutron was tested by pulsed laser to get SEB laser energy threshold, results show after neutron test SEB threshold laser energies will decrease obviously, with laser energy equivalence linear energy transfer (ELET) decrease much more. All the results mentioned above show that DD will distinctly affect SEB capabilities of SiC chips, DD will induce a leakage current path, which will decrease SEB threshold LET when SEE will also cause a leakage current path.