Novel hydrophilic SiO2 wafer bonding using combined surface-activated bonding technique

被引：9

作者：

He, Ran ^{[1
]}

Fujino, Masahisa ^{[1
]}

Yamauchi, Akira ^{[2
]}

Suga, Tadatomo ^{[1
]}

机构：

[1] Univ Tokyo, Sch Engn, Dept Precis Engn, Bunkyo Ku, Tokyo 1138656, Japan

[2] Bondtech Co Ltd, Kyoto 611003, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 03期

关键词：

SILICON-ON-INSULATOR; LOW-TEMPERATURE; MEDIUM-VACUUM; PLASMA ACTIVATION; THERMAL OXIDE; MODEL; LAYER;

D O I：

10.7567/JJAP.54.030218

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-temperature hydrophilic SiO2-SiO2 wafer bonding has been performed in vacuum by a new combined surface-activated bonding (SAB) technique. In this technique, wafers are irradiated by ion beam bombardment and simultaneously deposited with silicon by in situ silicon sputter deposition, and then terminated with Si-OH groups by water vapor exposure prior to bonding in vacuum. A surface energy of more than 1 J/m(2) was achieved by 200 degrees C postbonding annealing. A void-free oxide intermediate layer with a thickness of about 15 nm was observed at the bonding interface by transmission electron microscopy (TEM). The increased bonding energy can be attributed to the greater number of Si-OH formed through hydroxylation of the silicon deposited on the SiO2 surfaces. (C) 2015 The Japan Society of Applied Physics

引用

页数：5

共 31 条

[1] SURFACE HYDROXYLATION OF SILICA [J].

ARMISTEAD, CG ;

TYLER, AJ ;

HAMBLETON, FH ;

MITCHELL, SA ;

HOCKEY, JA .

JOURNAL OF PHYSICAL CHEMISTRY, 1969, 73 (11) :3947-+

[2] PE-TEOS Wafer Bonding Enhancement at Low Temperature with a High-κ Dielectric Capping Layer of Al2O3 [J].

Chong, G. Y. ;

Tan, C. S. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (02) :H137-H141

[3] Wafer direct bonding:: From advance substrate engineering to future applications in micro/nanoelectronics [J].

Christiansen, Silke H. ;

Singh, Rajendra ;

Goesele, Ulrich .

PROCEEDINGS OF THE IEEE, 2006, 94 (12) :2060-2106

[4]

Dragoi V., 2006, ECS Transactions, V3, P147

[5] Measurement of bonding energy in an anhydrous nitrogen atmosphere and its application to silicon direct bonding technology [J].

Fournel, F. ;

Continni, L. ;

Morales, C. ;

Da Fonseca, J. ;

Moriceau, H. ;

Rieutord, F. ;

Barthelemy, A. ;

Radu, I. .

JOURNAL OF APPLIED PHYSICS, 2012, 111 (10)

[6] WAFER BONDING FOR SILICON-ON-INSULATOR TECHNOLOGIES [J].

LASKY, JB .

APPLIED PHYSICS LETTERS, 1986, 48 (01) :78-80

[7] A Review of Hydrophilic Silicon Wafer Bonding [J].

Masteika, V. ;

Kowal, J. ;

Braithwaite, N. St J. ;

Rogers, T. .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2014, 3 (04) :Q42-Q54

[8] BONDING OF SILICON-WAFERS FOR SILICON-ON-INSULATOR [J].

MASZARA, WP ;

GOETZ, G ;

CAVIGLIA, A ;

MCKITTERICK, JB .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (10) :4943-4950

[9] FORMATION OF INTERFACE BUBBLES IN BONDED SILICON-WAFERS - A THERMODYNAMIC MODEL [J].

MITANI, K ;

GOSELE, UM .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1992, 54 (06) :543-552

[10] Low temperature direct bonding: An attractive technique for heterostructures build-up [J].

Moriceau, H. ;

Rieutord, F. ;

Fournel, F. ;

Di Cioccio, L. ;

Moulet, C. ;

Libralesso, L. ;

Gueguen, P. ;

Taibi, R. ;

Deguet, C. .

MICROELECTRONICS RELIABILITY, 2012, 52 (02) :331-341

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