Optical and structural properties of Eu2+-doped (Sr1-xBax)2SiO4 phosphors

被引：69
作者：
Kim, JS [1 ]
Park, YH
Choi, JC
Park, HL
机构：
[1] Pukyong Natl Univ, Div Image Informat Sci & Engn, Pusan 608739, South Korea
[2] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2005年 / 152卷 / 09期
关键词：
D O I：
10.1149/1.1971065
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Europium (Eu2+)-doped alkaline earth orthosilicates (Sr1-xBax)(2)SiO4:Eu2+, are studied as a phosphor for color-tunable white-light-emitting diode. With an increase of Ba ions in (Sr1-xBax)(2)SiO4:Eu2+, the lattice constants increase, and the emission bands shift to higher energy in a systematic way. This blueshift behavior can be clarified by crystal field strength. Also, the lattice vibration energies from Raman spectra decrease with an increase of Ba ions in (Sr1-xBax)(2)SiO4:Eu2+. The emission-quenching temperature dependence of the lattice vibration frequency is investigated in terms of a well-known configurational coordinate diagram. (c) 2005 The Electrochemical Society.
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页码：H135 / H137
页数：3
相关论文
共 16 条
  • [1] BLASSE G, 1968, PHILIPS RES REP, V23, P201
  • [2] STRUCTURES OF TWINNED BETA-SR2SIO4 AND OF ALPHA'-SR1.9BA0.1SIO4
    CATTI, M
    GAZZONI, G
    IVALDI, G
    [J]. ACTA CRYSTALLOGRAPHICA SECTION C-CRYSTAL STRUCTURE COMMUNICATIONS, 1983, 39 (JAN) : 29 - 34
  • [3] Energy of the first 4f7→4f65d transition of Eu2+ in inorganic compounds
    Dorenbos, P
    [J]. JOURNAL OF LUMINESCENCE, 2003, 104 (04) : 239 - 260
  • [4] VIBRATIONAL-SPECTRA, FORCE-CONSTANTS, AND SI-O BOND CHARACTER IN CALCIUM SILICATE CRYSTAL-STRUCTURE
    HANDKE, M
    [J]. APPLIED SPECTROSCOPY, 1986, 40 (06) : 871 - 877
  • [5] Henderson B., 1989, OPTICAL SPECTROSCOPY
  • [6] THE BETA-REVERSIBLE-ALPHA' TRANSITION IN SR2SIO4 (AND CA2SIO4, K2SEO4 ETC), INVOLVING A MODULATED STRUCTURE
    HYDE, BG
    SELLAR, JR
    STENBERG, L
    [J]. ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1986, 42 : 423 - 429
  • [7] White illumination characteristics of ZnS-based phosphor materials excited by InGaN-based Ultraviolet Light-Emitting Diode
    Murakami, K
    Taguchi, T
    Yoshino, M
    [J]. DISPLAY TECHNOLOGIES III, 2000, 4079 : 112 - 119
  • [8] Nakamura S., 1996, BLUE LASER DIODE
  • [9] Phosphor-conversion white light emitting diode using InGaN near-ultraviolet chip
    Narukawa, Y
    Niki, I
    Izuno, K
    Yamada, M
    Murazaki, Y
    Mukai, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (4A): : L371 - L373
  • [10] White light-emitting diodes of GaN-based Sr2SiO4:Eu and the luminescent properties
    Park, JK
    Lim, MA
    Kim, CH
    Park, HD
    Park, JT
    Choi, SY
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (05) : 683 - 685
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