Mobility model for compact device modeling of OTFTs made with different materials

被引：81
作者：
Estrada, M. [1 ]
Mejia, I. [1 ]
Cerdeira, A. [1 ]
Pallares, J. [2 ]
Marsal, L. F. [2 ]
Iniguez, B. [2 ]
机构：
[1] CINVESTAV, Dept Ingn Elect, Secc Elect Estado Solido, Mexico City 07300, DF, Mexico
[2] Univ Rovira & Virgili, Dept Engn Elect Elect & Automat, Tarragona 43007, Spain
来源：
SOLID-STATE ELECTRONICS | 2008年 / 52卷 / 05期
关键词：
mobility modeling; extraction of DOS parameters; OTFT modeling;
D O I：
10.1016/j.sse.2007.11.007
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we present a new approach to model mobility in organic thin film transistors, OTFTs, which is used to analyze the behavior of mobility in devices made of poly(methyl methacrylate), PMMA, on poly(3-hexylthiophene), P3HT, recently reported by us. It is also used to discuss differences observed between OTFTs made with other polymers and oligomers. The method allows the calculation of the characteristic temperature and energy distribution of localized states (DOS) in the active layer, considering an exponential distribution. It is also shown that using the extracted DOS parameters as input DOS parameters in ATLAS simulator, it is possible to reproduce very well the device characteristics. (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：787 / 794
页数：8
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