On-Demand Reconfiguration of Nanomaterials: When Electronics Meets Ionics

被引:166
作者
Lee, Jihang [1 ,2 ]
Lu, Wei D. [1 ]
机构
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
[2] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
基金
美国国家科学基金会;
关键词
magnetoelectric effect; memristive systems; neuromorphic computing; plasmonic switching; resistive switching; LONG-TERM POTENTIATION; ELECTRIC-FIELD CONTROL; SELECTOR DEVICE REQUIREMENTS; MEMRISTIVE DEVICES; RESISTIVE MEMORY; SOLID-ELECTROLYTE; THIN-FILMS; HIGH-SPEED; SWITCHING CHARACTERISTICS; CONDUCTIVE FILAMENTS;
D O I
10.1002/adma.201702770
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Rapid advances in the semiconductor industry, driven largely by device scaling, are now approaching fundamental physical limits and face severe power, performance, and cost constraints. Multifunctional materials and devices may lead to a paradigm shift toward new, intelligent, and efficient computing systems, and are being extensively studied. Herein examines how, by controlling the internal ion distribution in a solid-state film, a material's chemical composition and physical properties can be reversibly reconfigured using an applied electric field, at room temperature and after device fabrication. Reconfigurability is observed in a wide range of materials, including commonly used dielectric films, and has led to the development of new device concepts such as resistive random-access memory. Physical reconfigurability further allows memory and logic operations to be merged in the same device for efficient in-memory computing and neuromorphic computing systems. By directly changing the chemical composition of the material, coupled electrical, optical, and magnetic effects can also be obtained. A survey of recent fundamental material and device studies that reveal the dynamic ionic processes is included, along with discussions on systematic modeling efforts, device and material challenges, and future research directions.
引用
收藏
页数:33
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