Dual-Band GaN Transistor-Based RF-DC Rectifier

被引：4

作者：

Zhang, Zhiwei ^{[1
]}

Cheng, Zhiqun ^{[1
]}

Fusco, Vincent ^{[2
]}

Buchanan, Neil ^{[2
]}

Gu, Chao ^{[2
]}

机构：

[1] Hangzhou Dianzi Univ, Sch Elect & Informat, Hangzhou, Peoples R China

[2] Queens Univ Belfast, ECIT Inst, Belfast, Antrim, North Ireland

来源：

PROCEEDINGS OF THE 2021 CROSS STRAIT RADIO SCIENCE AND WIRELESS TECHNOLOGY CONFERENCE (CSRSWTC) | 2021年

基金：

英国工程与自然科学研究理事会;

关键词：

dual-band; GaN; high-efficiency; rectifier; transistor;

D O I：

10.1109/CSRSWTC52801.2021.9631691

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes a dual-band high-efficiency RF-DC GaN transistor-based rectifier. The use of GaN transistors gives the rectifier a large power capability. On the basis of the dual- band power amplifier, a dual-band RF-DC rectifier is realized by using the time-reversal duality theory. At the same time, a dual-band phase adjustment network and the input matching network are optimized integrally to realize a self-synchronous rectifier with a more compact and less lossy circuit. The simulation results show that at 2.0 GHz, 2.5 GHz, the rectifier has an efficiency of more than 75% when the input power is 40 dBm and dc load is 50 ohms.

引用

页码：202 / 204

页数：3

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