A graded-gap X-ray detector with charge avalanche multiplication

被引：4

作者：

Dapkus, L. ^{[1
]}

Jasutis, V. ^{[1
]}

Juciene, V. ^{[1
]}

Pozela, J. ^{[1
]}

Pozela, K. ^{[1
]}

Silenas, A. ^{[1
]}

机构：

[1] Lithuania Acad Sci, Inst Semicond Phys, LT-01108 Vilnius, Lithuania

来源：

LITHUANIAN JOURNAL OF PHYSICS | 2007年 / 47卷 / 01期

关键词：

X-ray detectors; graded-gap AlxGa1-xAs structures;

D O I：

10.3952/lithjphys.47115

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Current response of graded-gap AlxGa1-xAs X-ray detector is experimentally investigated. An increase in sensitivity of the detectors is achieved using a charge avalanche multiplication effect in a narrow region of a p-AlxGa1-xAs/n-GaAs heterojunction. The graded-gap AlxGa1-xAs X-ray detector with charge avalanche Multiplication has been developed. The sensitivity of this new type detector at a bias voltage U = 1.5 V reaches 2.5 A/W. That is fifty times higher in comparison with the sensitivity of the detector without charge multiplication (U = 0).

引用

页码：37 / 40

页数：4

共 4 条

[1]

AKIMOV YK, 1989, POLUPROVODNIKOVYE DE, P104

[2] A graded-gap detector of ionizing radiation [J].

Pozela, J ;

Pozela, K ;

Silenas, A ;

Jasutis, V ;

Dapkus, L ;

Kinduris, A ;

Juciene, V .

SEMICONDUCTORS, 2002, 36 (01) :116-120

[3] Graded-gap AlxGa1-x as X-ray detector with collected charge multiplication [J].

Silenas, A ;

Pozela, K ;

Dapkus, L ;

Jasutis, V ;

Juciene, V ;

Pozela, J ;

Smith, KM .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2003, 509 (1-3) :30-33

[4] Non-uniformly doped graded-gap AlxGal-xAs X-ray detectors with high photovoltaic response [J].

Silenas, A ;

Pozela, J ;

Smith, KM ;

Pozela, K ;

Jasutis, V ;

Dapkus, L ;

Juciene, V .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2002, 487 (1-2) :54-59

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