Epitaxial growth of crack-free GaN on patterned Si(111) substrate

被引：18

作者：

Lee, Seung-Jae ^{[1
,2
]}

Bak, Gyu Hyeong ^{[1
]}

Jeon, Seong-Ran ^{[1
]}

Lee, Sang Hern ^{[1
]}

Kim, Sang-Mook ^{[1
]}

Jung, Sung Hoon ^{[1
]}

Lee, Cheul-Ro ^{[2
]}

Lee, In-Hwan ^{[2
]}

Leem, Shi-Jong ^{[3
]}

Baek, Jong Hyeob ^{[1
]}

机构：

[1] Korea Photon Technol Inst, Kwangju 500779, South Korea

[2] Chonbuk Natl Univ, Coll Engn, RCAMD, Sch Adv Mat Engn, Jeonju 561756, South Korea

[3] Korea Univ, Dept Elect Engn, Seoul 136713, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 04期

关键词：

GaN; AIN; silicon; MOCVD;

D O I：

10.1143/JJAP.47.3070

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality GaN epilayers were grown on patterned Si(111) substrates by metalorganic chemical vapor deposition. Crack-free GaN epilayers were obtained by growing the GaN on the plateau of the patterned Si(111) substrate. A high-temperature AlN buffer layer improved the crystalline quality of the GaN epilayer. When the growth temperature of the AlN buffer layer was 1000 degrees C, the GaN epitaxial layer showed a smooth surface and high crystalline quality. The dislocation density of the subsequently grown GaN layer was 2 x 10(9) cm(-2), which is comparable to those of conventional GaN epilayers grown on sapphire substrate.

引用

页码：3070 / 3073

页数：4

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