Optical dominated high power sub-nanosecond pulse system - art. no. 66211W

被引:0
|
作者
SHI Wei [1 ]
LIU Zheng [1 ]
LIAO Xue [1 ]
机构
[1] Xian Univ Technol, Dept Appl Phys, Xian 710048, Peoples R China
来源
INTERNATIONAL SYMPOSIUM ON PHOTOELECTRONIC DETECTION AND IMAGING 2007: PHOTOELECTRONIC IMAGING AND DETECTION | 2008年 / 6621卷
关键词
PCSS; GaAs; sub-nanosecond; high power electrical pulse; combinatorial switch;
D O I
10.1117/12.790941
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High power sub-nanosecond electrical pulse system based on photoconductive semiconductor switch (PCSS) is reported. To get high power sub-nanosecond electrical pulse, experiments of three kinds of switches such as a lateral semi-insulating GaAs PCSS, gas gap added into the two electrodes of the switch on the GaAs chip and combinatorial switchs of GaAs PCSS with gas switch are triggered by nano-second laser pulse. The source of the triggered laser is YAG lasers, and the width of the laser is about 3.5 ns. A maximum current is only 38A by a single 3.5mm PCSS. The combinatorial switch of a 3mm-gap PCSS and a 0.6 similar to 0.8mm gas switch is triggered at the biased voltage 4000V, a high current pulse is acquired with the peak value above 5160A, and ns risetime. The voltage transmission efficiency is more than 100%(129%),which can not be answered for the ohm-theorem. This phenomena is explained with the theorem of plasma.
引用
收藏
页码:W6211 / W6211
页数:7
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