Fabrication of large size FeSi2 thermoelectric device by thermal spraying process
被引:10
作者:
Ueno, K
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Minist Int Trade & Ind, Agcy Ind Sci & Technol, Osaka Natl Res Inst, Ikeda, Osaka 5638577, JapanMinist Int Trade & Ind, Agcy Ind Sci & Technol, Osaka Natl Res Inst, Ikeda, Osaka 5638577, Japan
Ueno, K
[1
]
Sodeoka, S
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Minist Int Trade & Ind, Agcy Ind Sci & Technol, Osaka Natl Res Inst, Ikeda, Osaka 5638577, JapanMinist Int Trade & Ind, Agcy Ind Sci & Technol, Osaka Natl Res Inst, Ikeda, Osaka 5638577, Japan
Sodeoka, S
[1
]
Suzuki, M
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Minist Int Trade & Ind, Agcy Ind Sci & Technol, Osaka Natl Res Inst, Ikeda, Osaka 5638577, JapanMinist Int Trade & Ind, Agcy Ind Sci & Technol, Osaka Natl Res Inst, Ikeda, Osaka 5638577, Japan
Suzuki, M
[1
]
Tsutsumi, A
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Minist Int Trade & Ind, Agcy Ind Sci & Technol, Osaka Natl Res Inst, Ikeda, Osaka 5638577, JapanMinist Int Trade & Ind, Agcy Ind Sci & Technol, Osaka Natl Res Inst, Ikeda, Osaka 5638577, Japan
Tsutsumi, A
[1
]
Kuramoto, K
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Minist Int Trade & Ind, Agcy Ind Sci & Technol, Osaka Natl Res Inst, Ikeda, Osaka 5638577, JapanMinist Int Trade & Ind, Agcy Ind Sci & Technol, Osaka Natl Res Inst, Ikeda, Osaka 5638577, Japan
Kuramoto, K
[1
]
Sawazaki, J
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Minist Int Trade & Ind, Agcy Ind Sci & Technol, Osaka Natl Res Inst, Ikeda, Osaka 5638577, JapanMinist Int Trade & Ind, Agcy Ind Sci & Technol, Osaka Natl Res Inst, Ikeda, Osaka 5638577, Japan
Sawazaki, J
[1
]
Yoshida, K
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Minist Int Trade & Ind, Agcy Ind Sci & Technol, Osaka Natl Res Inst, Ikeda, Osaka 5638577, JapanMinist Int Trade & Ind, Agcy Ind Sci & Technol, Osaka Natl Res Inst, Ikeda, Osaka 5638577, Japan
Yoshida, K
[1
]
Huang, H
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Minist Int Trade & Ind, Agcy Ind Sci & Technol, Osaka Natl Res Inst, Ikeda, Osaka 5638577, JapanMinist Int Trade & Ind, Agcy Ind Sci & Technol, Osaka Natl Res Inst, Ikeda, Osaka 5638577, Japan
Huang, H
[1
]
Nagai, K
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Minist Int Trade & Ind, Agcy Ind Sci & Technol, Osaka Natl Res Inst, Ikeda, Osaka 5638577, JapanMinist Int Trade & Ind, Agcy Ind Sci & Technol, Osaka Natl Res Inst, Ikeda, Osaka 5638577, Japan
Nagai, K
[1
]
Kondo, H
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Minist Int Trade & Ind, Agcy Ind Sci & Technol, Osaka Natl Res Inst, Ikeda, Osaka 5638577, JapanMinist Int Trade & Ind, Agcy Ind Sci & Technol, Osaka Natl Res Inst, Ikeda, Osaka 5638577, Japan
Kondo, H
[1
]
Nakahama, S
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Minist Int Trade & Ind, Agcy Ind Sci & Technol, Osaka Natl Res Inst, Ikeda, Osaka 5638577, JapanMinist Int Trade & Ind, Agcy Ind Sci & Technol, Osaka Natl Res Inst, Ikeda, Osaka 5638577, Japan
Nakahama, S
[1
]
机构:
[1] Minist Int Trade & Ind, Agcy Ind Sci & Technol, Osaka Natl Res Inst, Ikeda, Osaka 5638577, Japan
来源:
XVII INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT 98
|
1998年
关键词:
D O I:
10.1109/ICT.1998.740407
中图分类号:
O414.1 [热力学];
学科分类号:
摘要:
To apply a thermoelectric device to power generation from waste heat from a incinerator or steel factory, large size thermoelectric device or module is required. Thermal spraying is the potential candidate as a processing tool for such device because it enables to form thick layer (to 5 mm or more) with simple and short process on large plates or long pipes, which can be inserted directly within the furnace or heat exchanger. Go-doped n-type FeSi2 powder was prepared, and thermoelectric device was formed by plasma spraying with 43 kW plasma under inert atmosphere. FeSi2 layer with the thickness of 3 - 5 mm was formed on a stainless steel (SUS430) plate (100 x 100 mm) and pipe (diameter: 25mm). The properties, microstructure and performance of thermal sprayed beta-FeSi2 thermoelectric device was evaluated.