Influence of Al content on temperature dependence of excitonic transitions in quantum wells

被引：13

作者：

Lourenço, SA

Dias, IFL

Laureto, E

Duarte, JL

Filho, DOT

Meneses, EA

Leite, JR

机构：

[1] Univ Estadual Londrina, Dept Fis, BR-86051970 Londrina, Parana, Brazil

[2] UNICAMP, IFGW, Inst Fis Gleb Wataghin, BR-13081970 Campinas, SP, Brazil

[3] Univ Sao Paulo, Inst Fis, IFUSP, BR-05315970 Sao Paulo, SP, Brazil

来源：

EUROPEAN PHYSICAL JOURNAL B | 2001年 / 21卷 / 01期

关键词：

D O I：

10.1007/s100510170207

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

AlxGa1-xAs/GaAs double quantum well structures with different well thickness and different barrier aluminum concentration (x = 0.17, 0.30, 0.40) were characterized by the photoluminescence technique. The temperature dependence of excitonic transitions in the temperature range of 2 K to 300 It were investigated, The photoluminescence data obtained give clear evidence of the influence of the aluminum concentration on the temperature dependence of excitonic transitions in the quantum wells. Varshni [Physica (Utrecht) 34, 194 (1967)], Vina et al. [Phys. Rev. B 30, 1979 (1984)] and Passler [Phys. Stab. Sol. (b) 200, 155 (1997)] models were used to fit the experimental points.

引用

页码：11 / 17

页数：7

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