Reversible Fermi Level Tuning of a Sb2Te3 Topological Insulator by Structural Deformation

被引：37

作者：

Park, Sang Han ^{[1
]}

Chae, Jimin ^{[1
]}

Jeong, Kwang Sik ^{[1
]}

Kim, Tae-Hyeon ^{[1
]}

Choi, Hyejin ^{[1
]}

Cho, Mann-Ho ^{[1
]}

Hwang, Inwoong ^{[2
,4
]}

Bae, Myung-Ho ^{[3
,4
]}

Kang, Chul ^{[5
]}

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[2] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

[3] Univ Sci & Technol, Dept Nanosci, Taejon 305350, South Korea

[4] Korea Res Inst Stand & Sci, Taejon 305340, South Korea

[5] Gwangju Inst Sci & Technol, Adv Photon Res Inst, Kwangju 500712, South Korea

来源：

NANO LETTERS | 2015年 / 15卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

Topological insulator; Sb2Te3; strain; PPMS; THz; DFT; ANTIMONY TELLURIDE; THIN-FILMS; STRAIN; SURFACE; BI2SE3; TRANSPORT; BI2TE3; STATES; BAND;

D O I：

10.1021/acs.nanolett.5b00553

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

For three-dimensional (3D) topological insulators that have a layered structure, strain was used to control critical physical properties. Here, we show that tensile strain decreases bulk carrier density while accentuating transport of topological surface state using temperature-dependent resistance and magneto-resistance measurements, terahertz-time domain spectroscopy and density functional theory calculations. The induced strain was confirmed by transmittance X-ray scattering measurements. The results show the possibility of reversible topological surface state device control using structural deformation.

引用

页码：3820 / 3826

页数：7

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