The Test Structures to Measure Resistivity and Contact Resistance of Poly-Si for Thermoelectric-Photoelectric Integrated Generator

We propose the polysilicon/Au contact resistance and polysilicon resistivity test structures, which are designed to analyze the thermoelectric performance of thermoelectric micro generators, and on the other hand can be used to guide the further optimization and preparation of the device. The contact resistance between Au and poly-silicon of integrated generator is tested using a Kelvin structure, and multiple tests adopted to reduce random errors. A pair of contiguous test electrodes are connected to the cross-over structure using a semiconductor girder, and another pair of test electrodes are connected to the cross-arm using a metal girder. Through the design test method, the resistivity of the test structure is 12.01 m Omega.cm under the processing technology of the integrated generator, and the contact resistance of the test structure is 100.765 Omega.