The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs

被引：182

作者：

Wang, Xiao-Dong ^{[1
]}

Hu, Wei-Da ^{[1
]}

Chen, Xiao-Shuang ^{[1
]}

Lu, Wei ^{[1
]}

机构：

[1] Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Double-channel HEMTs (DC-HEMTs); hot-electron effect; self-heating effect; III-V semiconductors; FIELD-EFFECT TRANSISTORS; PIEZOELECTRIC POLARIZATION; THERMAL-CONDUCTIVITY; THIN-FILMS; GAN; MOBILITY; HETEROSTRUCTURES; SIMULATION; RESISTANCE; DENSITY;

D O I：

10.1109/TED.2012.2188634

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The direct current characteristics of AlGaN/GaN double-channel HEMTs (DC-HEMTs) are investigated by using 2-D numerical simulations. The output characteristics have been predicted with the drift-diffusion, thermodynamic, hydrodynamic, and hot-electron models, respectively. The prediction by the hydrodynamic model is in good agreement with the experiment. It is demonstrated that the hot-electron effect makes a negligible contribution to the negative differential conductance (NDC) of an AlGaN/GaN DC-HEMT; instead, the NDC effect is caused by the self-heating effect. The transfer and transconductance characteristics of an AlGaN/GaN DC-HEMT are also discussed in detail. Finally, a new In0.18Al0.82N/GaN/AlGaN/GaN DC-HEMT structure is proposed for optimizing AlGaN/GaN DC-HEMTs.

引用

页码：1393 / 1401

页数：9

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