The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs

被引：182
作者：
Wang, Xiao-Dong [1 ]
Hu, Wei-Da [1 ]
Chen, Xiao-Shuang [1 ]
Lu, Wei [1 ]
机构：
[1] Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 05期
基金：
中国国家自然科学基金;
关键词：
Double-channel HEMTs (DC-HEMTs); hot-electron effect; self-heating effect; III-V semiconductors; FIELD-EFFECT TRANSISTORS; PIEZOELECTRIC POLARIZATION; THERMAL-CONDUCTIVITY; THIN-FILMS; GAN; MOBILITY; HETEROSTRUCTURES; SIMULATION; RESISTANCE; DENSITY;
D O I：
10.1109/TED.2012.2188634
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The direct current characteristics of AlGaN/GaN double-channel HEMTs (DC-HEMTs) are investigated by using 2-D numerical simulations. The output characteristics have been predicted with the drift-diffusion, thermodynamic, hydrodynamic, and hot-electron models, respectively. The prediction by the hydrodynamic model is in good agreement with the experiment. It is demonstrated that the hot-electron effect makes a negligible contribution to the negative differential conductance (NDC) of an AlGaN/GaN DC-HEMT; instead, the NDC effect is caused by the self-heating effect. The transfer and transconductance characteristics of an AlGaN/GaN DC-HEMT are also discussed in detail. Finally, a new In0.18Al0.82N/GaN/AlGaN/GaN DC-HEMT structure is proposed for optimizing AlGaN/GaN DC-HEMTs.
引用
收藏
页码：1393 / 1401
页数：9
相关论文
共 44 条
[1]   Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J].
Ambacher, O ;
Smart, J ;
Shealy, JR ;
Weimann, NG ;
Chu, K ;
Murphy, M ;
Schaff, WJ ;
Eastman, LF ;
Dimitrov, R ;
Wittmer, L ;
Stutzmann, M ;
Rieger, W ;
Hilsenbeck, J .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3222-3233
[2]   Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures [J].
Ambacher, O ;
Foutz, B ;
Smart, J ;
Shealy, JR ;
Weimann, NG ;
Chu, K ;
Murphy, M ;
Sierakowski, AJ ;
Schaff, WJ ;
Eastman, LF ;
Dimitrov, R ;
Mitchell, A ;
Stutzmann, M .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :334-344
[3]   Hot electrons in group-III nitrides at moderate electric fields [J].
Barry, EA ;
Kim, KW ;
Kochelap, VA .
APPLIED PHYSICS LETTERS, 2002, 80 (13) :2317-2319
[4]   Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors [J].
Braga, N ;
Mickevicius, R ;
Gaska, R ;
Hu, X ;
Shur, MS ;
Khan, MA ;
Simin, G ;
Yang, J .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (11) :6409-6413
[5]   ELECTRON AND HOLE DRIFT VELOCITY-MEASUREMENTS IN SILICON AND THEIR EMPIRICAL RELATION TO ELECTRIC-FIELD AND TEMPERATURE [J].
CANALI, C ;
MAJNI, G ;
MINDER, R ;
OTTAVIANI, G .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) :1045-1047
[6]   AlGaN-GaN double-channel HEMTs [J].
Chu, RM ;
Zhou, YG ;
Liu, J ;
Wang, DL ;
Chen, KJ ;
Lau, KM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (04) :438-446
[7]   Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures [J].
Dabiran, A. M. ;
Wowchak, A. M. ;
Osinsky, A. ;
Xie, J. ;
Hertog, B. ;
Cui, B. ;
Look, D. C. ;
Chow, P. P. .
APPLIED PHYSICS LETTERS, 2008, 93 (08)
[8]   AlGaN/GaN double heterostructure channel modulation doped field effect transistors (MODFETs) [J].
Fan, ZF ;
Lu, CZ ;
Botchkarev, AE ;
Tang, H ;
Salvador, A ;
Aktas, O ;
Kim, W ;
Morkoc, H .
ELECTRONICS LETTERS, 1997, 33 (09) :814-815
[9]   Transport Studies of AlGaN/GaN Heterostructures of Different Al Mole Fractions With Variable SiNx Passivation Stress [J].
Fehlberg, Tamara B. ;
Milne, Jason S. ;
Umana-Membreno, Gilberto A. ;
Keller, Stacia ;
Mishra, Umesh K. ;
Nener, Brett D. ;
Parish, Giacinta .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (08) :2589-2596
[10]   Fabrication and Characterization of Thin-Barrier Al0.5Ga0.5N/AlN/GaN HEMTs [J].
Felbinger, Jonathan G. ;
Fagerlind, Martin ;
Axelsson, Olle ;
Rorsman, Niklas ;
Gao, Xiang ;
Guo, Shiping ;
Schaff, William J. ;
Eastman, Lester F. .
IEEE ELECTRON DEVICE LETTERS, 2011, 32 (07) :889-891
12345