Crack tip dislocations revealed by electron tomography in silicon single crystal

被引：77

作者：

Tanaka, Masaki ^{[1
]}

Higashida, Kenji ^{[1
]}

Kaneko, Kenji ^{[1
,2
]}

Hata, Satoshi ^{[3
]}

Mitsuhara, Masatoshi ^{[3
]}

机构：

[1] Kyushu Univ, Dept Mat Sci & Engn, Nishi Ku, Fukuoka 8190395, Japan

[2] JST CREST, Nishi Ku, Fukuoka 8190395, Japan

[3] Kyushu Univ, Dept Engn Sci Elect & Mat, Kasuga, Fukuoka 8168580, Japan

来源：

SCRIPTA MATERIALIA | 2008年 / 59卷 / 08期

关键词：

electron tomography; fracture; dislocations; transmission electron microscopy; scanning transmission electron microscopy;

D O I：

10.1016/j.scriptamat.2008.06.042

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Crack tip dislocations in silicon single crystals have been observed by a combination of annular dark-field scanning transmission electron microscopy and computed tomography. A series of images was acquired by maintaining the diffraction vector parallel to that of crack propagation to achieve sharp images of the dislocations. The observed dislocations were reconstructed by a filtered back-projection, and exhibited three-dimensional configurations of overlaid dislocations around the crack tip. (C) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：901 / 902

页数：2

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