Thermal conductivity of ultrathin nano-crystalline diamond films determined by Raman thermography assisted by silicon nanowires

被引：48

作者：

Anaya, Julian ^{[1
]}

Rossi, Stefano ^{[2
]}

Alomari, Mohammed ^{[2
]}

Kohn, Erhard ^{[2
]}

Toth, Lajos ^{[3
]}

Pecz, Bela ^{[3
]}

Kuball, Martin ^{[1
]}

机构：

[1] Univ Bristol, Ctr Device Thermog & Reliabil, Bristol BS8 1TL, Avon, England

[2] Univ Ulm, Inst Elect Devices & Circuits EBS, D-89081 Ulm, Germany

[3] Inst Tech Phys & Mat Sci, Thin Film Phys Dept, H-1525 Budapest, Hungary

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 22期

关键词：

VAPOR-DEPOSITED DIAMOND; NANOCRYSTALLINE DIAMOND; SCATTERING; CONDUCTANCE; TEMPERATURE; HEMT; CVD;

D O I：

10.1063/1.4922035

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermal transport in polycrystalline diamond films near its nucleation region is still not well understood. Here, a steady-state technique to determine the thermal transport within the nano-crystalline diamond present at their nucleation site has been demonstrated. Taking advantage of silicon nanowires as surface temperature nano-sensors, and using Raman Thermography, the in-plane and cross-plane components of the thermal conductivity of ultra-thin diamond layers and their thermal barrier to the Si substrate were determined. Both components of the thermal conductivity of the nano-crystalline diamond were found to be well below the values of polycrystalline bulk diamond, with a cross-plane thermal conductivity larger than the in-plane thermal conductivity. Also a depth dependence of the lateral thermal conductivity through the diamond layer was determined. The results impact the design and integration of diamond for thermal management of AlGaN/GaN high power transistors and also show the usefulness of the nanowires as accurate nano-thermometers. (C) 2015 AIP Publishing LLC.

引用

页数：5

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