Piezoelectric properties of (K, Na)NbO3 thin films deposited on (001)SrRuO3/Pt/MgO substrates

被引:0
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作者
Mino, Takuya [1 ]
Kuwajima, Shuichiro [1 ]
Suzuki, Takaaki [1 ]
Kanno, Isaku [1 ]
Kotera, Hidetoshi [1 ]
Wasa, Kiyotaka [1 ]
机构
[1] Kyoto Univ, Sakyo Ku, Kyoto 6068501, Japan
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Thin films of Pb- free single crystal (K,, Na1-xNbO3, KNN, were epitaxially grown on (001)SrRuO3 / (001)Pt / (001)MgO substrates by rf-magnetron sputtering. In the pseudo-tetragonal system, c-lattice parameters of the sputtered KNN films were around 1% longer than those of the bulk KNN. The sputtered KNN thin films showed bulk like dielectric properties and/or ferroelectricity. Dielectric constant c, spontaneous polarization P,, and coercive electric field E-c of KNN (x= 0.1: (K-0.1, Na-0.9)NbO3) were 300, 20 mu C/cm(2)) and 50 [kV/cm], respectively. The piezoelectric coefficient e(31)* of NaNbO3 (NN) films was e(31)* congruent to -0.7 [C/m(2)], which was 60% of e(31) of bulk NN ceramics. On the other hand, the piezoelectric properties increased with the doping of K and KNN (x=0.1) showed relatively large e(31)* of -2.4 [C/m(2)].
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页码:627 / 630
页数:4
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