Near white light emission from GaN based light emitting diode with GaN/AlGaN distributed Bragg reflector

被引：1
作者：
Wen, Feng [1 ]
Huang, Lirong [1 ]
Jiang, Bo [1 ]
Tong, Liangzhu [1 ]
Xu, Wei [1 ]
Liu, Deming [1 ]
机构：
[1] Huazhong Univ Sci & Technol, Coll Optoelect Sci & Engn, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2010年 / 13卷 / 03期
基金：
国家高技术研究发展计划(863计划); 中国国家自然科学基金;
关键词：
Light emitting diode; Distributed Bragg reflector; Metal-organic chemical vapor deposition; MULTIQUANTUM-WELL; GENERATION; EFFICIENCY; SAPPHIRE;
D O I：
10.1016/j.mssp.2010.07.001
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A near white GaN-based multiple quantum well (MQW) light emitting diode (LED) was grown by metal-organic chemical vapor deposition on top of a 20-period GaN/AlzGa1-zN distributed Bragg reflector (DBR). Photoluminescence, electroluminescence and high resolution X-ray diffraction were performed to analyze the sample characteristics. The results show that the introduction of the DBR increases the ratio of the green to blue light intensities. Near white light emission with commission international de l'Eclairage color coordinates x=0.18, y=0.28 was achieved at injection current 20 mA for the sample with DBR. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码：147 / 150
页数：4
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