Near white light emission from GaN based light emitting diode with GaN/AlGaN distributed Bragg reflector

被引：1

作者：

Wen, Feng ^{[1
]}

Huang, Lirong ^{[1
]}

Jiang, Bo ^{[1
]}

Tong, Liangzhu ^{[1
]}

Xu, Wei ^{[1
]}

Liu, Deming ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Coll Optoelect Sci & Engn, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2010年 / 13卷 / 03期

基金：

国家高技术研究发展计划(863计划); 中国国家自然科学基金;

关键词：

Light emitting diode; Distributed Bragg reflector; Metal-organic chemical vapor deposition; MULTIQUANTUM-WELL; GENERATION; EFFICIENCY; SAPPHIRE;

D O I：

10.1016/j.mssp.2010.07.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A near white GaN-based multiple quantum well (MQW) light emitting diode (LED) was grown by metal-organic chemical vapor deposition on top of a 20-period GaN/AlzGa1-zN distributed Bragg reflector (DBR). Photoluminescence, electroluminescence and high resolution X-ray diffraction were performed to analyze the sample characteristics. The results show that the introduction of the DBR increases the ratio of the green to blue light intensities. Near white light emission with commission international de l'Eclairage color coordinates x=0.18, y=0.28 was achieved at injection current 20 mA for the sample with DBR. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：147 / 150

页数：4

共 15 条

[1] Monolithic white light emitting diodes using a (Ga,InN/GaN multiple quantum well light converter [J].

Damilano, B. ;

Dussaigne, A. ;

Brault, J. ;

Huault, T. ;

Natali, F. ;

Demolon, P. ;

De Mierry, P. ;

Chenot, S. ;

Massies, J. .

APPLIED PHYSICS LETTERS, 2008, 93 (10)

[2] Monolithic white light emitting diodes based on InGaN/GaN multiple-quantum wells [J].

Damilano, B ;

Grandjean, N ;

Pernot, C ;

Massies, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (9AB) :L918-L920

[3] Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes [J].

David, Aurelien ;

Grundmann, Michael J. ;

Kaeding, John F. ;

Gardner, Nathan F. ;

Mihopoulos, Theodoros G. ;

Krames, Michael R. .

APPLIED PHYSICS LETTERS, 2008, 92 (05)

[4] Phosphor-free white-light light-emitting diode of weakly carrier-density-dependent spectrum with prestrained growth of InGaN/GaN quantum wells [J].

Huang, Chi-Feng ;

Lu, Chih-Feng ;

Tang, Tsung-Yi ;

Huang, Jeng-Jie ;

Yang, C. C. .

APPLIED PHYSICS LETTERS, 2007, 90 (15)

[5] Improved characteristics of GaN-based light-emitting diodes by distributed Bragg reflector grown on Si [J].

Ishikawa, H ;

Asano, K ;

Zhang, B ;

Egawa, T ;

Jimbo, T .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2004, 201 (12) :2653-2657

[6] Effects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance [J].

Kuo, YK ;

Chang, YA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2004, 40 (05) :437-444

[7] Monolithic InGaN-based white light-emitting diodes with blue, green, and amber emissions [J].

Lee, Sung-Nam ;

Paek, H. S. ;

Kim, H. ;

Jang, T. ;

Park, Y. .

APPLIED PHYSICS LETTERS, 2008, 92 (08)

[8] White light generation from In-rich InAlGaN/InGaN heterostructures [J].

Nagarajan, S. ;

Lee, Y. S. ;

Kumar, M. Senthil ;

Cha, O. H. ;

Hong, C-H ;

Suh, E-K .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (01)

[9] Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire [J].

Nakada, N ;

Nakaji, M ;

Ishikawa, H ;

Egawa, T ;

Umeno, M ;

Jimbo, T .

APPLIED PHYSICS LETTERS, 2000, 76 (14) :1804-1806

[10] Suppression of crack generation in GaN/AIGaN distributed Bragg reflector on sapphire by the insertion of GaN/AIGaN superlattice grown by metal-organic chemical vapor deposition [J].

Nakada, N ;

Ishikawa, H ;

Egawa, T ;

Jimbo, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (2B) :L144-L146

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