Theoretical modeling of XBn T2SLs InAs/InAsSb/B-AlSb longwave infrared detector operating under thermoelectrical cooling

被引：3

作者：

Martyniuk, P. ^{[1
]}

Michalczewski, K. ^{[1
]}

Tsai, T. Y. ^{[2
]}

Wu, C. H. ^{[2
]}

Wu, Y. R. ^{[2
]}

机构：

[1] Mil Univ Technol, Inst Appl Phys, 2 Kaliskiego Str, PL-00908 Warsaw, Poland

[2] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Roosevelt Rd, Taipei 10617, Taiwan

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2020年 / 52卷 / 02期

关键词：

LWIR; T2SLs InAs; InAsSb; Barrier detector; SUPERLATTICE DETECTORS; INAS/GASB;

D O I：

10.1007/s11082-019-2159-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper reports on the barrier longwave infrared nBnn(+) detector based on InAs/InAsSb (x(Sb)=0.38) type-II superlattice operating under thermoelectrical cooling (>190 K). That active layer exhibits cut-off wavelength10 mu m at 230 K. AlSb was proved to minimize barrier in valence band in analysed temperature range and assumed architecture. The highest detectivity of the simulated structure was assessed at the level of10(9) cm Hz(1/2)/W at T230 K assuming immersion contribution. The barrier detector performance was compared to HgCdTe detectors with10.6 mu m cut-off wavelength at 230 K and13 mu m cut-off wavelength at 195 K.

引用

页数：10

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