A High Power-Handling RF MEMS Tunable Capacitor Using Quadruple Series Capacitor Structure

被引：0

作者：

Yamazaki, Hiroaki ^{[1
]}

Ikehashi, Tamio ^{[1
]}

Saito, Tomohiro ^{[1
]}

Ogawa, Etsuji ^{[1
]}

Masunaga, Takayuki ^{[2
]}

Ohguro, Tatsuya ^{[1
]}

Sugizaki, Yoshiaki ^{[1
]}

Shibata, Hideki ^{[1
]}

机构：

[1] Toshiba Co Ltd, Ctr Corp Res & Dev, Device Proc Dev Ctr, Yokohama, Kanagawa 2358522, Japan

[2] Toshiba Co Ltd, Corporate Mfg Engn Ctr, Yokohama, Kanagawa 2350017, Japan

来源：

2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT) | 2010年

关键词：

Hot-switching; power-handling; RF MEMS; tunable capacitor;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an RF MEMS tunable capacitor that achieves an excellent power-handling property with relatively low actuation voltage. The tunable capacitor consists of two fixed MIM (Metal-Insulator-Metal) capacitors and two MEMS capacitor elements, all connected in series. This quadruple series capacitor (QSC) structure enables reduction of the actuation voltage without sacrificing the power-handling capability, since the MIM capacitor reduces the RF voltage amplitude applied to the MEMS capacitors. The measured result demonstrates +36dBm hot-switching at 85 degrees C with 21V pull-in voltage.

引用

页码：1138 / 1141

页数：4

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