AlN/Diamond np-junctions

被引：21

作者：

Nebel, CE ^{[1
]}

Miskys, CR ^{[1
]}

Garrido, JA ^{[1
]}

Hermann, M ^{[1
]}

Ambacher, O ^{[1
]}

Eickhoff, M ^{[1
]}

Stutzmann, M ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

关键词：

plasma-induced molecular beam epitaxy (PIMBE); pn heterojunction; AlGaN alloys;

D O I：

10.1016/S0925-9635(03)00313-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The first aluminum nitride/diamond heterojunction light-emitting diode is realized by plasma-induced molecular beam epitaxy. The pn heterojunction consists of a silicon doped AIN (n-type) epitaxial film on (100) naturally boron-doped (p-type) diamond substrate. The diode shows excellent rectifying properties with intense light emission in the spectral range of approximately 2.7 and 4.8 eV Heterojunctions manufactured from AlGaN alloys and diamond hold great promise for new applications in optoelectronics as well as in high frequency and high power electronics. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：1873 / 1876

页数：4

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