Helical States of Topological Insulator Bi2Se3

被引:50
作者
Zhao, Yonghong [1 ,2 ,3 ]
Hu, Yibin [1 ,2 ]
Liu, Lei [4 ]
Zhu, Yu [4 ]
Guo, Hong [1 ,2 ]
机构
[1] McGill Univ, Ctr Phys Mat, Montreal, PQ H3A 2T8, Canada
[2] McGill Univ, Dept Phys, Montreal, PQ H3A 2T8, Canada
[3] Sichuan Normal Univ, Coll Phys & Elect Engn, Chengdu 610068, Peoples R China
[4] Nanoacad Technol Inc, Brossard, PQ J4Z 1A7, Canada
基金
中国国家自然科学基金; 加拿大自然科学与工程研究理事会;
关键词
Topological insulator; helical states; SOI; NEGF-DFT; SINGLE DIRAC CONE; SURFACE; NANORIBBONS; MICROSCOPY; ENERGY; BI2TE3;
D O I
10.1021/nl200584f
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report density functional theory analysis of the electronic and quantum transport properties of Bi2Se3 topological insulator, focusing on the helical surface states at the Fermi level E-F. The calculated Dirac point and the tilt angle of the electron spin in the helical states are compared quantitatively with the experimental data. The calculated conductance near E-F shows a V-shaped spectrum, consistent with STM measurements. The spins in the helical states at E-F not only tilts out of the two-dimensional plane, they also oscillate with a 3-fold symmetry going around the two-dimensional Brillouin zone. The helical states penetrate into the material bulk, where the first quintuple layer contributes 70% of the helical wave functions.
引用
收藏
页码:2088 / 2091
页数:4
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