Observation of phonon bottleneck in quantum dot electronic relaxation

被引：308
作者：
Urayama, J [1 ]
Norris, TB
Singh, J
Bhattacharya, P
机构：
[1] Univ Michigan, Ctr Ultrafast Opt Sci, Ann Arbor, MI 48109 USA
[2] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
[3] Univ Michigan, Solid State Elect Lab, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
来源：
PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 21期
关键词：
D O I：
10.1103/PhysRevLett.86.4930
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Time-resolved differential transmission measurements of self-assembled In(0.4)Ga(0.6)AS quantum dots clearly indicate a phonon bottleneck between the n = 2 and II = 1 electronic levels. The key to this observation is the generation of electrons in dots where there are no holes so that electron-hole scattering does not mask the bottleneck. We use a simple carrier capture model consisting of two capture configurations to explain the bottleneck signal and offer arguments to rule out other possible sources of the signal.
引用
收藏
页码：4930 / 4933
页数：4
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