AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates

被引：21

作者：

Cirlin, G. E. ^{[1
,2
,3
,4
,5
]}

Reznik, R. R. ^{[1
,2
,3
,4
]}

Shtrom, I., V ^{[1
,2
,5
]}

Khrebtov, A., I ^{[1
]}

Soshnikov, I. P. ^{[1
,2
,5
]}

Kukushkin, S. A. ^{[6
]}

Leandro, L. ^{[7
]}

Kasama, T. ^{[8
]}

Akopian, Nika ^{[7
]}

机构：

[1] St Petersburg Acad Univ, RAS, Khlopina 8-3, St Petersburg 194021, Russia

[2] RAS, Inst Analyt Instrumentat, Rizhsky 26, St Petersburg 190103, Russia

[3] ITMO Univ, Kronverkskiy Pr 49, St Petersburg 197101, Russia

[4] Peter Great St Petersburg Polytech Univ, Polyltechnicheskaya 29, St Petersburg 195251, Russia

[5] RAS, Ioffe Phys Tech Inst, Politekhnicheskaya 26, St Petersburg 194021, Russia

[6] Russian Acad Sci, Inst Problems Mech Engn, Bolshoj 61, St Petersburg 199178, Russia

[7] Tech Univ Denmark, Dept Photon Engn, DK-2800 Lyngby, Denmark

[8] Tech Univ Denmark, Ctr Electron Nanoscopy, DK-2800 Lyngby, Denmark

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2017年 / 50卷 / 48期

基金：

俄罗斯科学基金会;

关键词：

nanowires; AIGaAs; quantum dots; molecular beam epitaxy; silicon; CORE-SHELL NANOWIRES; HETEROSTRUCTURES;

D O I：

10.1088/1361-6463/aa9169

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The data on growth peculiarities and physical properties of GaAs insertions embedded in AlGaAs nanowires grown on different (1 1 1) substrates by Au-assisted molecular beam epitaxy are presented. The influence of nanowires growth conditions on structural and optical properties is studied in detail. It is shown that by varying the growth parameters it is possible to form structures like quantum dots that emit in a wide wavelengths range. These quantum dots show sharp and intense emission lines when an optical signal is collected from a single nanowire. The technology proposed opens new possibilities for integration of direct-band A(III)B(V )materials on silicon platform.

引用

页数：6

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