Sulfide passivation of III-V semiconductor surfaces: role of the sulfur ionic charge and of the reaction potential of the solution

被引：12

作者：

Bessolov, VN ^{[1
]}

Zhilyaev, YV ^{[1
]}

Konenkova, EV ^{[1
]}

Lebedev, MV ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS | 1998年 / 43卷 / 08期

关键词：

D O I：

10.1134/1.1259113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A model is proposed for describing the effect of a solution on the electronic properties of sulfided surfaces of III-V semiconductors which treats the adsorption of sulfur in terms of a Lewis oxide-base interaction. According to this model, the density of states on a sulfided surface, which pin the Fermi level, decreases as the global hardness of the electron shell of the adsorbed sulfide ions is increased. The Thomas-Fermi-Dirac method is used to calculate the global hardness of sulfide ions with different charges as a function of the dielectric constant of the medium. It is shown that the hardness of a sulfur ion is greater when its charge is lower and the dielectric constant of the solvent is lower. (C) 1998 American Institute of Physics. [S1063-7842(98)02008 -X].

引用

页码：983 / 985

页数：3

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