Sulfide passivation of III-V semiconductor surfaces: role of the sulfur ionic charge and of the reaction potential of the solution

被引：12
|
作者：
Bessolov, VN [1 ]
Zhilyaev, YV [1 ]
Konenkova, EV [1 ]
Lebedev, MV [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS | 1998年 / 43卷 / 08期
关键词：
D O I：
10.1134/1.1259113
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A model is proposed for describing the effect of a solution on the electronic properties of sulfided surfaces of III-V semiconductors which treats the adsorption of sulfur in terms of a Lewis oxide-base interaction. According to this model, the density of states on a sulfided surface, which pin the Fermi level, decreases as the global hardness of the electron shell of the adsorbed sulfide ions is increased. The Thomas-Fermi-Dirac method is used to calculate the global hardness of sulfide ions with different charges as a function of the dielectric constant of the medium. It is shown that the hardness of a sulfur ion is greater when its charge is lower and the dielectric constant of the solvent is lower. (C) 1998 American Institute of Physics. [S1063-7842(98)02008 -X].
引用
收藏
页码：983 / 985
页数：3
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