Structural and electrical characterization of intrinsic n-type In2O3 nanowires

被引：33

作者：

Jo, Gunho ^{[1
]}

Hong, Woong-Ki ^{[1
]}

Maeng, Jongsun ^{[1
]}

Kim, Tae-Wook ^{[1
]}

Wang, Gunuk ^{[1
]}

Yoon, Ahnsook ^{[1
]}

Kwon, Soon-Shin ^{[1
]}

Song, Sunghoon ^{[1
]}

Lee, Takhee ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS | 2008年 / 313卷 / 308-311期

关键词：

indium oxide; nanowire; field effect transistor; nanoelectronics;

D O I：

10.1016/j.colsurfa.2007.04.166

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We synthesized high-quality single-crystalline indium oxide nanowires using gold catalytic vapor-liquid-solid growth and characterized their electrical properties with field effect transistor structures. The grown indium oxide nanowires are non-stoichiometric with In:0 composition ratio of 1: 1.24 due to oxygen vacancies from X-ray photoelectron spectroscopic study. These oxygen vacancies act as donors in indium oxide nanowires. The field effect transistors based on these nanowires exhibited good transistor characteristics with well-defined linear and saturation regions with on/off ratios as high as 3 x 10(4) at drain bias 0.1 V, electron carrier density of 3.7 x 10(17) cm(-3) and an electron mobility of 85 cm(2)/V s. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：308 / 311

页数：4

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