A layered Ge2Sb2Te5 phase change material

被引：4

作者：

Zhang, Bo ^{[1
]}

Cicmancova, Veronika ^{[2
]}

Kupcik, Jaroslav ^{[3
]}

Slang, Stanislav ^{[2
]}

Pereira, Jhonatan Rodriguez ^{[2
]}

Svoboda, Roman ^{[4
]}

Kutalek, Petr ^{[5
]}

Wagner, Tomas ^{[1
,2
]}

机构：

[1] Univ Pardubice, Fac Chem Technol, Dept Gen & Inorgan Chem, Studentska 573, Pardubice 53210, Czech Republic

[2] Univ Pardubice, Fac Chem Technol, Ctr Mat & Nanotechnol, Nam Cs Legii 565, Pardubice 53002, Czech Republic

[3] ASCR, Inst Inorgan Chem, Husinec Rez 25068, Czech Republic

[4] Univ Pardubice, Fac Chem Technol, Dept Phys Chem, Studentska 573, Pardubice 53210, Czech Republic

[5] Univ Pardubice, Joint Lab Solid State Chem, Studentska 84, Pardubice 53210, Czech Republic

来源：

NANOSCALE | 2020年 / 12卷 / 05期

关键词：

CHANGE MEMORY; CRYSTALLIZATION; DYNAMICS; MODEL;

D O I：

10.1039/c9nr08745a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this study, a universal Ge2Sb2Te5 phase change material was sputtered to obtain a layered structure. The crystalline phase of this material was prepared by annealing. SEM (scanning electron microscopy) and HRTEM (high-resolution transmission electron microscopy) images give confirmed that the sputtered Ge2Sb2Te5 thin film in crystalline phase has multiple layers. The layers can be exfoliated by acetone. The thicknesses of acetone-exfoliated crystalline and amorphous flakes are approx. 10-60 nm.

引用

页码：3351 / 3358

页数：8

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