Three-dimensional InAs/GaAs quantum-dot islands size and density study using kinetic Monte Carlo simulation

被引：0

作者：

Sun, M. ^{[1
]}

Pan, E. ^{[1
]}

Chung, P. W. ^{[2
]}

机构：

[1] Univ Akron, Dept Civil Engn, Akron, OH 44325 USA

[2] US Army, Aberdeen Proving Ground, MD 21005 USA

来源：

QUANTUM DOTS, PARTICLES, AND NANOCLUSTERS VI | 2009年 / 7224卷

关键词：

Three dimension; Quantum dot; Self-organization; Kinetic Monte Carlo; Density; Size; MOLECULAR-BEAM EPITAXY; GROWTH; GAAS; SURFACES;

D O I：

10.1117/12.813027

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Three-dimensional (3D) InAs/GaAs quantum dots (QDs) island size and density evolution under different coverage and temperature is studied by using our 3D kinetic Monte Carlo (KMC) model. Our KMC model is based on the solid-on-solid one with bond counting and Ehrlich-Schwoebel barrier being incorporated. It is found that there is a QD island size limit for the growth coverage. Below this limit existing QD islands can adsorb new-coming adatoms; however, beyond the limit new QD islands will form and adopt new coming adatoms. It is also observed that with increasing temperature, the QD islands size will be increased while their density will be reduced.

引用

页数：8

共 19 条

[1] Exploitation of optical interconnects in future server architectures [J].