Phase control through anisotropic strain in Nd0.5Sr0.5MnO3 thin films -: art. no. 182504

被引：96
作者：
Nakamura, M [1 ]
Ogimoto, Y
Tamaru, H
Izumi, N
Miyano, K
机构：
[1] Natl Inst Adv Ind Sci & Technol, CERC, Tsukuba, Ibaraki 3058562, Japan
[2] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan
[3] Sharp Co Ltd, Devices Technol Res Labs, Nara 6328567, Japan
[4] Univ Tokyo, Adv Sci & Technol Res Ctr, Tokyo 1538904, Japan
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 18期
基金：
日本学术振兴会;
关键词：
D O I：
10.1063/1.1923754
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Strain effect in charge- and orbital-ordered state has been investigated for Nd0.5Sr0.5MnO3 thin films deposited on (100), (110), and (111)-oriented substrates of SrTiO3. Films on (001) and (111) substrates have a monotonous temperature dependence for magnetic and transport properties showing; no first-order phase transition. On the other hand, films on (110) substrate show a clear ferromagnetic-antiferromagnetic and metal-insulator transition around 170 K similar to that in a bulk single crystal, which is a manifestation of the charge and orbital order. Precise control of the hole concentration was also demonstrated around half doping. (c) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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