Self-Assembled Local Artificial Substrates of GaAs on Si Substrate

被引：3
|
作者：
Bietti, S. [1 ,2 ]
Somaschini, C. [1 ,2 ]
Koguchi, N. [1 ,2 ]
Frigeri, C. [3 ]
Sanguinetti, S. [1 ,2 ]
机构：
[1] Univ Milano Bicocca, L NESS, I-20125 Milan, Italy
[2] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy
[3] Ist CNR IMEM, I-43100 Parma, Italy
来源：
NANOSCALE RESEARCH LETTERS | 2010年 / 5卷 / 12期
关键词：
Nanotechnology; Molecular beam epitaxy; Droplet epitaxy; Integration of III-V on Si; Local artificial substrate; GROWTH;
D O I：
10.1007/s11671-010-9760-5
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We propose a self-assembling procedure for the fabrication of GaAs islands by Droplet Epitaxy on silicon substrate. Controlling substrate temperature and amount of supplied gallium is possible to tune the base size of the islands from 70 up to 250 nm and the density from 10 7 to 10(9) cm(-2). The islands show a standard deviation of base size distribution below 10% and their shape evolves changing the aspect ratio from 0.3 to 0.5 as size increases. Due to their characteristics, these islands are suitable to be used as local artificial substrates for the integration of III-V quantum nanostructures directly on silicon substrate.
引用
收藏
页码：1905 / 1907
页数：3
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