A 0.5-14-GHz 10.6-dB CMOS cascode distributed amplifier

被引：82

作者：

Liu, RC ^{[1
]}

Lin, CS ^{[1
]}

Deng, KL ^{[1
]}

Wang, H ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

来源：

2003 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS | 2003年

关键词：

D O I：

10.1109/VLSIC.2003.1221183

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A 0.5-14-GHz distributed amplifier (DA) using 0.18-mum CMOS technology has been presented. It demonstrates the highest gain bandwidth product reported for a CMOS amplifier using a standard Si-based IC process. This DA chip achieves measured results of 10.6 +/- 0.9 dB gain, NF between 3.4 and 5.4 dB with good return losses better than from 0.5 to 14 GHz. The measured output IP3 and P-1dB are +20 dBm and +10 dBm, respectively, from 2 to 10 GHz.

引用

页码：139 / 140

页数：2

共 6 条

[1] A 0.5-8.5-GHz fully differential CMOS distributed amplifier [J].

Ahn, HT ;

Allstot, DJ .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2002, 37 (08) :985-993

[2] A fully integrated 0.5-5.5-GHz CMOS distributed amplifier [J].

Ballweber, BM ;

Gupta, R ;

Allstot, DJ .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (02) :231-239

[3] Silicon-on-sapphire MOSFET distributed amplifier with coplanar waveguide matching [J].

Chen, PF ;

Johnson, RA ;

Wetzel, M ;

de la Houssaye, PR ;

Garcia, GA ;

Asbeck, PM ;

Lagnado, I .

1998 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, 1998, :161-164

[4] Performance of 1-10-GHz traveling wave amplifiers in 0.18-μm CMOS [J].

Frank, BM ;

Freundorfer, AP ;

Antar, YMM .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2002, 12 (09) :327-329

[5]

KLEVELAND B, 1999, IEEE INT SOL STAT CI, P70

[6] An integrated CMOS distributed amplifier utilizing packaging inductance [J].

Sullivan, PJ ;

Xavier, BA ;

Ku, WH .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1997, 45 (10) :1969-1976

← 1 →