Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates

被引：79

作者：

Wan, Yating ^{[1
]}

Zhang, Zeyu ^{[2
]}

Chao, Ruilin ^{[2
,3
]}

Norman, Justin ^{[4
]}

Jung, Daehwan ^{[1
]}

Shang, Chen ^{[4
]}

Li, Qiang

Kennedy, M. J. ^{[2
]}

Liang, Di ^{[6
]}

Zhang, Chong ^{[6
]}

Shi, Jin-Wei ^{[2
,3
]}

Gossard, Arthur C. ^{[2
,4
]}

Lau, Kei May ^{[5
]}

Bowers, John E. ^{[2
,4
]}

机构：

[1] Univ Calif Santa Barbara, Inst Energy Efficiency, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[3] Natl Cent Univ, Dept Elect Engn, Jhongli, Taiwan

[4] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[5] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

[6] Hewlett Packard Enterprise, Hewlett Packard Labs, 1501 Page Mill Rd, Palo Alto, CA 94304 USA

来源：

OPTICS EXPRESS | 2017年 / 25卷 / 22期

关键词：

I-N PHOTODETECTORS; MICRO-DISK LASERS; HIGH-SPEED; SI; PHOTONICS; CIRCUITS; DESIGN; CHIP;

D O I：

10.1364/OE.25.027715

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report InAs/InGaAs quantum dot (QD) waveguide photodetectors (PD) monolithically grown on silicon substrates. A high-crystalline quality GaAs-on-Si template was achieved by aspect ratio trapping together with the combined effects of cyclic thermal annealing and strain-balancing layer stacks. An ultra-low dark current of 0.8 nA and an internal responsivity of 0.9 A/W were measured in the O band. We also report, to the best of our knowledge, the first characterization of high-speed performance and the first demonstration of the on-chip photodetection for this QD-on-silicon system. The monolithically integrated waveguide PD shares the same platform as the previously demonstrated micro-ring lasers and can thus be integrated with laser sources for power monitors or amplifiers for pre-amplified receivers. (C) 2017 Optical Society of America

引用

页码：27715 / 27723

页数：9

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