Vortex Pinning Properties of Phosphorous-Doped BaFe2As2 Epitaxial Films: Comparison Between (La, Sr)(Al, Ta)O3 and MgO Substrates

被引:5
作者
Sato, Hikaru [1 ]
Hiramatsu, Hidenori [1 ,2 ]
Kamiya, Toshio [1 ,2 ]
Hosono, Hideo [1 ,2 ,3 ]
机构
[1] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan
[2] Tokyo Inst Technol, Mat Res Ctr Element Strategy, Yokohama, Kanagawa 2268503, Japan
[3] Tokyo Inst Technol, Frontier Res Ctr, Yokohama, Kanagawa 2268503, Japan
基金
日本学术振兴会;
关键词
Critical current density; flux pinning; superconducting materials; superconducting thin films; GRAIN-BOUNDARIES; SUPERCONDUCTOR;
D O I
10.1109/TASC.2014.2368073
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Phosphorus-doped BaFe2As2 (BaFe2As2 : P) epitaxial films were fabricated on (La, Sr)(Al, Ta)O-3 single-crystal substrates, and their crystallinity, microstructure, and transport critical current density (J(c)) properties were characterized. Compared with those of previously reported BaFe2As2 : P epitaxial films on MgO substrates, a decrease in the self-field J(c) and strong pinning properties along the c-axis under high magnetic fields were observed. These results can be understood by considering the poor crystallinity and the large density of the domain boundary pinning centers of the present films on (La, Sr)(Al, Ta)O-3, which would be caused by a thin reaction layer produced between the BaFe2As2 : P film and the (La, Sr)(Al, Ta)O-3 substrate.
引用
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页数:5
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