The effect of Stone-Wales defect orientations on the electronic properties of single-walled carbon nanotubes

被引:34
作者
Azadi, Sam [1 ,2 ,3 ]
Moradian, Rostam [2 ,3 ,4 ]
Shafaee, Atoosa Mousavi [5 ]
机构
[1] SISSA, Int Sch Adv Studies, I-34014 Trieste, Italy
[2] Razi Univ, Fac Sci, Dept Phys, Kermanshah, Iran
[3] Razi Univ, Nano Sci & Nano Technol Res Ctr, Kermanshah, Iran
[4] Inst Res Fundamental Sci IPM, Dept Nanosci, Computat Phys Sci Lab, Tehran, Iran
[5] Univ Basel, Biozentrum, CH-4056 Basel, Switzerland
关键词
Carbon nanotubes; Stone-Wales defect; Density functional theory; Density of states; MECHANICAL RELAXATION; TRANSPORT-PROPERTIES; TOPOLOGICAL DEFECTS; NITRIDE NANOTUBES; OZONE ADSORPTION; BEHAVIOR; BORON;
D O I
10.1016/j.commatsci.2010.06.013
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Density functional theory (DFT) calculations of the Stone-Wales defected (S-WD) single-walled carbon nanotube (CNT) (10,0) are carried out to understand the effect of S-WD orientations on the electronic properties of CNT. We have considered the influence of super-cell approximation on the defect formation energy and the electronic properties of both circumferential and axial S-W defects in CNT. We found that the probability of S-WD orientation depends on the defect concentration. Density of states of defected CNTs calculations have been applied to indicate the effect of S-WD concentration on the semiconducting energy gap. Utilizing the local density of states investigation, also, we explain the reasons for the adsorption of foreign atoms and molecules on S-WDs. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:699 / 703
页数:5
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