Crystallographic influence on nanomechanics of ultra-thin silicon resonators

被引：0

作者：

Wang, DF ^{[1
]}

Ono, T ^{[1
]}

Esashi, M ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808579, Japan

来源：

BOSTON TRANSDUCERS'03: DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2 | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of crystallographic orientations on nanomechanical properties of 50-nm-thick single crystalline silicon resonators was investigated by examining the effects of surface treatments, such as flash-heating and 02 adsorption on the mechanical quality factors (Q-factors) and resonant frequencies. Cantilevers with (100), (110) and (111) orientations were examined in this work. A 1500-mn-thick (100) cantilever array was also studied for comparison. The loss mechanisms in energy dissipation were discussed in terms of support loss, thermoelastic loss, as well as surface loss. The results obtained in this study provide an insight into the understanding of surface effects on nanomechanics of resonating elements, and provide design guidelines for future's nanoengineered devices for ultimate sensing.

引用

页码：336 / 339

页数：4

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